Method for evaluating epitaxial layer of silicon epitaxial wafer and method for manufacturing silicon epitaxial wafer

摘要

PROBLEM TO BE SOLVED: To provide a method of evaluating an epitaxial layer of a silicon epitaxial wafer, capable of accurately and conveniently evaluating dopant concentrations, defects, contamination, etc. of the epitaxial layer in photoluminescence measurement.SOLUTION: A method of evaluating an epitaxial layer of a silicon epitaxial wafer includes the steps of: producing an SOI wafer including a base substrate made of single crystal silicon, a buried insulating film, and an SOI layer formed of only the silicon epitaxial layer transferred from the silicon epitaxial wafer; and evaluating the silicon epitaxial layer by irradiating excitation light from the surface of an SOI layer formed of only the silicon epitaxial layer of a produced SOI wafer to perform photoluminescence measurement.SELECTED DRAWING: Figure 1