CMP POLISHING LIQUID, CMP POLISHING LIQUID SET, AND POLISHING METHOD

摘要

To provide a CMP polishing liquid, a CMP polishing liquid set, and a polishing method of a substrate, capable of achieving both of a high polishing speed and less polishing scratches against an insulation material.SOLUTION: A CMP polishing liquid is used which contains cerium oxide particles and water, and in a powder X-ray diffraction chart of the cerium oxide particles, a half value width of a main peak appeared in a range of 2θ=27.000 to 29.980° is 0.26 to 0.36°, a mean particle diameter of the cerium oxide particles is 130 nm or more and less than 175 nm, and the number of the cerium oxide particles having a particle size of 1.15 μm or more is 5,000×10/mL or less.SELECTED DRAWING: Figure 2