Polishing liquid for CMP, polishing liquid set for CMP, and polishing method

摘要

One embodiment of the present invention relates to a polishing liquid for CMP containing cerium oxide particles and water, wherein the half-value width of the main peak appearing within a range from 2θ=27.000 to 29.980° in a powder X-ray diffraction chart of the cerium oxide particles is from 0.26 to 0.36°, the average particle size of the cerium oxide particles is at least 130 nm but less than 175 nm, and the number of cerium oxide particles having a particle size of 1.15 μm or greater is 5000×103/mL or less.