Integrated circuits and methods for fabricating integrated circuits with magnetic tunnel junction (MTJ) structures

摘要

Integrated circuits and methods for fabricating magnetic tunnel junction (MTJ) structures and integrated circuits are provided. An exemplary method for fabricating an integrated circuit including a magnetic tunnel junction (MTJ) structure includes forming magnetic tunnel junction (MTJ) layers over a substrate. Further, the method includes forming a conductive pillar over the MTJ layers, wherein the conductive pillar is formed with an uppermost surface, and wherein the uppermost surface is not planarized. Also, the method includes etching the MTJ layers to form a pillar structure from portions of the MTJ layers underlying the conductive pillar.