Magnetic Tunnel Junction (MTJ) sensors for integrated circuits (IC) electric current measurement

摘要

We report on MgO Magnetic Tunnel Junction (MTJ) devices focusing on their potential application in the measurement of electrical current at the integrated circuit level. Single devices and full bridges have been specifically developed for this purpose. A sort of different designs regarding their geometry arrangement as well as the number of constitutive elements have been tested. Experimental characterization has been performed and results including impedance and sensitivity measurements are given.