Integrated circuits having magnetic tunnel junctions (MTJ) and methods for fabricating the same

摘要

Integrated circuits with magnetic tunnel junction (MTJ) structures and methods for fabricating integrated circuits with MTJ structures are provided. An exemplary method for fabricating an integrated circuit includes forming a first conductive line in electrical connection with an underlying semiconductor device. The method exposes a surface of the first conductive line. Further, the method selectively deposits a conductive material on the surface of the first conductive line to form an electrode contact. The method includes forming a MTJ structure over the electrode contact.