Semiconductor device including laterally diffused metal-oxide-semiconductor field effect transistor and method for manufacturing the same

摘要

According to one embodiment, a semiconductor device includes a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, an insulating unit, a void, a gate insulating film and a gate electrode. The second semiconductor region provides on a part of the first semiconductor region. The third semiconductor region provides on one other part of the first semiconductor region. The insulating unit provides on a part of the second semiconductor region. The void provides at a lower part of the insulating unit. The gate insulating film provides on a part of the first semiconductor region between the second semiconductor region and the third semiconductor region. The gate electrode provides on the gate insulating film. A position in a first direction of at least a part of the void is between the insulating unit and the third semiconductor region.