Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal-oxide-semiconductor field-effect transistor with low on-state resistance

著录项

• 来源
  《中国物理：英文版》 |2016年第2期|430-435|共6页
• 作者

  Yu-Ru Wang; Yi-He Liu; Zhao-Jiang Lin; Dong Fang; Cheng-Zhou Li; Ming Qiao; Bo Zhang;

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• 作者单位

  State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;

  State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;

  State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;

  State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;

  State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;

  State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;

  Institute of Electronic and Information Engineering in Dongguan, UESTC, Dongguan 523808, China;

  State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词