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A Computer Program to Calculate Surface State Densities and Lateral Nonuniformities in Metal-Oxide-Semiconductor Devices.

机译：计算金属氧化物半导体器件中表面态密度和横向非均匀性的计算机程序。

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摘要

A Basic language computer program to control data taking and parameter calculation of metal-oxide-semiconductor devices is presented. The program calculates surface potential, surface state density, apparent doping density, and depletion width.

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作者
pandolfi, t. a. royce, b. s. h.;
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年度 1975
页码 1-59
总页数 59
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Semiconductor devices; Computer programs; Metal oxide semiconductors; Surface properties; Doping; Depletion; Surface energy; Density; BASIC programming language;

机译：半导体器件;计算机程序;金属氧化物半导体;表面特性;掺杂;耗尽;表面能;密度; BasIC编程语言;

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A Computer Program to Calculate Surface State Densities and Lateral Nonuniformities in Metal-Oxide-Semiconductor Devices.

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