首页>
外国专利>
Orientation engineering in complementary metal oxide semiconductor fin field effect transistor integration for increased mobility and sharper junction
Orientation engineering in complementary metal oxide semiconductor fin field effect transistor integration for increased mobility and sharper junction
展开▼
机译:互补金属氧化物半导体鳍式场效应晶体管集成中的定向工程,以提高迁移率和更清晰的结
展开▼
页面导航
摘要
著录项
相似文献
摘要
A semiconductor device that includes at least one germanium containing fin structure having a length along a 100 direction and a sidewall orientated along the (100) plane. The semiconductor device also includes at least one germanium free fin structure having a length along a 100 direction and a sidewall orientated along the (100) plane. A gate structure is present on a channel region of each of the germanium containing fin structure and the germanium free fin structure. N-type epitaxial semiconductor material having a square geometry present on the source and drain portions of the sidewalls having the (100) plane orientation of the germanium free fin structures. P-type epitaxial semiconductor material having a square geometry is present on the source and drain portions of the sidewalls having the (100) plane orientation of the germanium containing fin structures.
展开▼