Efficient Mobility Enhancement Engineering on 65 nm Fully Silicide Complementary Metal-Oxide-Semiconductor Field-Effect-Transistors Using Second Contect Etch Stop Layer Process

摘要

In this study, we have applied a second high-stress contect etch stop layer (CESL) in nickel fully silicide complementary metal-oxide-semiconductor field-effect-transistors (Ni FUSI CMOSFETs) and investigated performance characteristics, such as driving capacity, leakages, low-frequency noise (LF noise), and capacitance-voltage (C-V) characteristics. In Ni FUSI nMOSFETs, the effect of the second CESL on the improvement of carrier mobility is apparent. However, the second CESL also induces defects and junction leakages, resulting in a high LF noise and a low accumulation capacitance. Since we adopted the tensile-stressed second CESL, which is profitless improving the performance of pMOSFETs (should be compress-stressed) and apparently degrades the devices' driving capability, leakages, and LF noise of the devices. Furthermore, the FUSI process does not induce apparent damage that increases the gate leakages of both Ni-FUSI nMOSFETs and pMOSFETs.