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Metal Oxide Semiconductor /MOS/ transistor research and development program. Part II - Development of stable complementary MOS FIELD effect transistors Final report, Mar. - Nov. 1965

机译：金属氧化物半导体/ mOs /晶体管研发计划。第二部分 - 稳定互补mOs场效应晶体管的开发最终报告，3月 - 1965年11月

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摘要

Simultaneous fabrication of enhancement mode metal oxide semiconductor transistors in epitaxial material

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作者
Cricchi, J. R.; White, M. H.;
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年度 1965
页码 1-33
总页数 33
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
AUGMENTATION; DEPOSITION; EPITAXY; FABRICATION; FIELD EFFECT TRANSISTORS; METAL OXIDE SEMICONDUCTORS; PRODUCTION ENGINEERING; SEMICONDUCTORS (MATERIALS); STABILITY; TRANSISTORS; EPITAXIAL DEPOSITION; METAL OXIDE SEMICONDUCTOR /MOS/; PRODUCTION ENGINEERING; TRANSISTOR;

机译：aUGmENTaTION;沉积;外延;制造;场效应晶体管;金属氧化物半导体;生产工程;半导体（材料）;稳定性;晶体管，外延沉积;金属氧化物半导体/ mOs /;生产工程;晶体管;

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Metal Oxide Semiconductor /MOS/ transistor research and development program. Part II - Development of stable complementary MOS FIELD effect transistors Final report, Mar. - Nov. 1965

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