LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR

摘要

A laterally diffused metal oxide semiconductor device and a fabrication method therefor. The laterally diffused metal oxide semiconductor device comprises: a substrate (10); a drift region (20) disposed in the substrate (10); a gate structure that is disposed on the substrate (10) and that comprises a gate dielectric layer (62) and a gate layer (64) on the gate dielectric layer (62); a drain region (40) that is disposed in the substrate (10) at one side of the gate structure and that is in contact with the drift region (20); a source region (50) disposed in the substrate (10) at the other side of the gate structure; and a gate-like structure (66) that is disposed between the gate structure and the drain region (40) above the drift region (20), a material of the gate-like structure (66) being the same as that of the gate layer (64), and the gate-like structure (66) being insulated from the gate layer (64).