Laterally diffused metal-oxide-semiconductor devices and fabrication methods thereof

摘要

The present disclosure provides a laterally diffused metal-oxide-semiconductor (LDMOS) device. The LDMOS device includes a plurality of fin structures formed on a substrate including a first device region, a second device region, and an isolation region sandwiched between the two regions. An opening is formed in the fin structures in the isolation region. The LDMOS device further includes an isolation layer formed in the opening and covering the sidewall of the opening formed by a portion of each fin structure in the first device region. The isolation layer exposes top surfaces of the plurality of fin structures. Moreover, the LDMOS device also includes a gate structure formed across each fin structure in the first device region. The gate structure covers a portion of the sidewall and the top surfaces of the fin structure formed in the first device region and also covers the top surface of the isolation layer.