METHOD FOR BONDING SIC SINGLE CRYSTAL, METHOD FOR PRODUCING SIC INGOT, AND MOUNT FOR USE IN GROWTH OF SIC SINGLE CRYSTAL

摘要

A method for bonding a SiC single crystal comprises: a measurement step of measuring the amount and direction of curvature of an atomic arrangement face of a SiC single crystal along at least a first direction that passes through the center in a plan view of the atomic arrangement face and a second direction that is orthogonal to the first direction; a provision step of providing a mount which has a curved surface that curves in the opposite direction from the atomic arrangement face of the SiC single crystal; and a bonding step of bonding the SiC single crystal to the mount in such a manner that the SiC single crystal and the mount face each other so that the direction of curvature of the atomic arrangement face and the direction of curvature of the curved surface can become different from each other.