Monopolar N-type or P-type carbon nanotube transistors and a method of manufacturing the same

摘要

Apparatus, materials, and methods are provided for fabricating and integrating carbon nanotubes (CNT) into TFTs to form unipolar CNT TFTs. CNT TFTs can include a doping layer between the CNT active layer and the source / drain electrodes to provide a carrier-trapping function, thereby suppressing unwanted carrier charge injection between the electrodes, thereby preventing monopolar operation of the CNT TFTs. Make it possible Methods and apparatuses for forming unipolar N-type or P-type SWCNT TFTs are also provided.