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Unipolar N- or P-Type Carbon Nanotube Transistors and Methods of Manufacture Thereof
Unipolar N- or P-Type Carbon Nanotube Transistors and Methods of Manufacture Thereof
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机译:单极N型或P型碳纳米管晶体管及其制造方法
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摘要
Devices, materials and methods for producing and integrating carbon nanotubes (CNT) into TFTs to form unipolar CNT TFTs are provided. CNT TFTs comprise doped layers between the CNT active layer and the source/drain electrodes capable of providing a carrier-trapping function such that unwanted carrier charge injection is suppressed between the electrodes allowing for the unipolar operation of CNT TFTs. Methods and apparatus for forming unipolar N- or P-type SWCNT TFTs are also provided.
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