SENSE AMPLIFIER FOR SENSING MULTI-LEVEL CELLS AND MEMORY DEVICE INCLUDING SAME

摘要

Provided is a sense amplifier for sensing multi-level cells and a memory device including the same. The sense amplifier senses the cell voltage stored in the memory cell as the most significant bit (MSB) and least significant bit (LSB) of the 2-bit data. When sensing the MSB of 2-bit data, the sense amplifier senses when the bit line and the sense amplifier are not electrically connected and when sensing the LSB of 2-bit data, the sense amplifier senses when the bit line and holding bit line are electrically connected. The sense amplifier equalizes the bit line pair of the sense amplifier before sensing the MSB and LSB of the 2-bit data. The sense amplifier restores the cell voltage corresponding to the sensed MSB and LSB of 2-bit data to the memory cell.;COPYRIGHT KIPO 2020