An Efficient Cell Array Structure of a Polymer Random Access Memory and the Correct Cell Sensing for Sense Amplifier

摘要

Polymer Random Access Memory (PoRAM) is a memory device that Au, N, Cs and etc trapping charge are inserted into polymer material. The previous cell array structure is hard to read data correctly because of current interference between cells. In this paper, to compensate these problems, a new cell array called "Row Chain Cell Array" is suggested that dose not have current interference. Furthermore, to read data, a current sense amplifier is more efficient and faster than the previous voltage sense amplifier due to low input impedance and low RC delay. They are verified by simulation.