Sensing Architecture for Multi-Level Cells of Polymer Memory

摘要

Memory using polymeric materials has particular resistance characteristics which should be understood since polymeric materials may represent next generation nonvolatile memory. We researched the multi-level cell (MLC) with two bits per cell. No sensing method has been applied in MLC using previous single-level cells (SLC). In this paper, we propose a new sensing architecture for a polymer memory cell array with a multi-level cell. For decoding the larger two-bit cell, we adapted a new address decoding method by adding an internal control signal. The sense amplifier architecture was operated by a generated control signal. We confirmed and verified that the new decoding method and sense amplifier architecture worked for the polymer memory of the multi-level cell.