Architectural Techniques for Multi-Level Cell Phase Change Memory Based Main Memory

摘要

Phase change memory (PCM) recently has emerged as a promising technology to meet the fast growing demand for large capacity main memory in modern computing systems. Multi-level cell (MLC) PCM storing multiple bits in a single cell offers high density with low per-byte fabrication cost. However, PCM suffers from long write latency, short cell endurance, limited write throughput and high peak power, which makes it challenging to be integrated in the memory hierarchy.ududTo address the long write latency, I propose write truncation to reduce the number of write iterations with the assistance of an extra error correction code (ECC). I also propose form switch (FS) to reduce the storage overhead of the ECC. By storing highly compressible lines in single level cell (SLC) form, FS improves read latency as well. ududTo attack the short cell endurance and large peak power, I propose elastic RESET (ER) to construct triple-level cell PCM. By reducing RESET energy, ER significantly reduces peak power and prolongs PCM lifetime. ududTo improve the write concurrency, I propose fine-grained write power budgeting (FPB) observing a global power budget and regulates power across write iterations according to the step-down power demand of each iteration. A global charge pump is also integrated onto a DIMM to boost power for hot PCM chips while staying within the global power budget. ududTo further reduce the peak power, I propose intra-write RESET scheduling distributing cell RESET initializations in the whole write operation duration, so that the on-chip charge pump size can also be reduced.