UNIFORM MASKING FOR WAFER DICING USING LASER AND PLASMA ETCH

摘要

Uniform masking for wafer dicing using laser and plasma etching is described. In an example, a method of dicing a semiconductor wafer with a plurality of integrated circuits with bumps or fillers includes uniformly spinning on the mask over the semiconductor wafer, the mask covering the integrated circuits It consists of a protective layer. The mask is then patterned using a laser scribing process, providing a patterned mask with gaps, exposing regions of the semiconductor wafer between integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask, singulating integrated circuits.