DEPOSITION OF AN AMORPHOUS CARBON LAYER WITH HIGH FILM DENSITY AND HIGH ETCH SELECTIVITY

摘要

Embodiments described herein relate to a method for processing a substrate. In one embodiment, the method includes introducing a gas mixture comprising a hydrocarbon gas and a diluent gas into a deposition chamber located in a processing system to form a low-hydrogen content amorphous carbon layer on the substrate. Generating a plasma from the gas mixture in the deposition chamber at a temperature of 700 ° C., transferring the substrate into a curing chamber located in the processing system without breaking the vacuum, and UV in the curing chamber at a curing temperature of about 200 ° C. or higher. Exposing the substrate to radiation.