Deposition of Fluorocarbon Films on Al and SiO_2 Surfaces in High-Density Fluorocarbon Plasmas: Selectivity and Surface Wettability

摘要

The present work focuses on the deposition of fluorocarbon (FC) films on aluminum and SiO_2 surfaces, and addresses the issue of selective deposition on Al versus SiO_2 in order to obtain surfaces of distinctly different wettability. If this is achieved, hydrophobic/hydrophilic patterning of substrates would be feasible by means of a self-aligned and relatively simple method. The selectivity of the deposition is optimized through proper selection of the deposition conditions, mainly gas-mixture composition and deposition time, and is demonstrated by means of contact-angle measurements on Al and SiO_2 surfaces. Chemical (XPS) analysis of the FC films deposited under various conditions is also performed and correlated with the wettability of the plasma-modified Al surfaces.