Optical, mechanical and etch properties of amorphous carbon nitride films grown by plasma enhanced chemical vapor deposition at room temperature

摘要

Amorphous carbon nitride (a-CN) films were grown on Si(100) and SiO_2/Si(l 00) substrates by plasma enhanced chemical vapor deposition at room temperature using gas mixtures of CH_4 and N_2. The as-deposited films showed two bond structures of C=N and C=N, and with increasing the N_2 content the bond structure changed to graphite-like structure. All the samples showed low optical absorption coefficient (κ<0.15) in the wavelength range of 300-800 nm. The a-CN films exhibited a good resistance to etching (i.e. higher selectivity over SiO_2), which indicates a potential use of a-CN films as a new hard mask material.