A boosted voltage generator circuit of a semiconductor memory device for reducing overshoot is disclosed. The boosted voltage generation circuit of the semiconductor memory device of the present invention includes: a sensing unit configured to generate an oscillation enable signal by sensing the level of the boosted voltage; An oscillating unit that is enabled in response to activation of the oscillation enable signal and generates a preliminary oscillation signal to be oscillated; A latch unit for generating a driving oscillation signal, wherein the driving oscillation signal is oscillated in synchronization with the preliminary oscillation signal in an active state of the oscillation enable signal, and is latched in response to deactivation of the oscillation enable signal. The latch part; And a pumping unit that is driven to increase the boosted voltage according to the rising and falling of the driving oscillation signal. According to the boosted voltage generation circuit of the semiconductor memory device of the present invention, the overshoot of the boosted voltage is greatly reduced.
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