首页> 外国专利> Voltage generation circuit for use in semiconductor memory device, has voltage generator to pump boost node in response to pumping control signals from control signal generator to generate two high voltages

Voltage generation circuit for use in semiconductor memory device, has voltage generator to pump boost node in response to pumping control signals from control signal generator to generate two high voltages

机译:用于半导体存储器件的电压产生电路,具有电压发生器,以响应于来自控制信号发生器的泵浦控制信号而泵浦升压节点以产生两个高电压

摘要

The circuit has a high voltage level detector (12) to detect a level of a high voltage to generate a high voltage level detection signal. A control signal generator generates three pumping control signals in response to the high voltage level detection signal. A voltage generator pumps a boost node in response to pumping control signals from the control signal generator to generate two high voltages.
机译:该电路具有高电压电平检测器(12),以检测高电压电平以生成高电压电平检测信号。控制信号发生器响应于高电压电平检测信号而产生三个泵送控制信号。电压产生器响应于来自控制信号产生器的泵送控制信号而泵送升压节点以产生两个高压。

著录项

  • 公开/公告号DE102005059499A1

    专利类型

  • 公开/公告日2006-08-10

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号DE20051059499

  • 发明设计人 JUN YOUNG-HYUN;HWANG HYONG-RYOL;

    申请日2005-12-06

  • 分类号G11C5/14;

  • 国家 DE

  • 入库时间 2022-08-21 21:20:09

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