Collector-emitter saturation voltage measurement in a bipolar transistor with an insulated gate electrode

摘要

A method comprising: determining that an insulated gate bipolar transistor (6; 24) is saturated; while the bipolar transistor (6; 24) is saturated, determining a collector-emitter saturation voltage of the bipolar transistor (6; 24); determining the collector current of the bipolar transistor (6; 24); and determining a temperature of the bipolar transistor (6; 24) based on the collector-emitter saturation voltage of the bipolar transistor (6; 24) and the collector current of the bipolar transistor (6; 24).