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CVD reactor with means for locally influencing the susceptor temperature

机译:具有局部影响基座温度的装置的CVD反应器

摘要

The invention relates to a device and a method for the thermal treatment of substrates with a susceptor (5) for receiving at least one substrate, which can be heated by a heating device (13) and rotatably driven by a rotary drive (20) about an axis of rotation (A). In order to compensate for local temperature differences on the rotating susceptor (5), means (14, 14 '; 15, 16) are provided for locally limited influencing of the heat transport to or from the susceptor (5) synchronized with the rotational movement of the susceptor (5). In particular, provision is made for a temperature control gas with changing thermal conductivity properties to be fed periodically through a feed opening (14 ') into a gap (10) between the susceptor (5) and a cooling unit (30).
机译:本发明涉及一种用于对具有用于容纳至少一个基板的基座(5)进行基板热处理的设备和方法,该基板和基座可以由加热装置(13)加热并且由旋转驱动器(20)可旋转地驱动。旋转轴(A)。为了补偿旋转基座(5)上的局部温差,设置了装置(14、14'; 15、16),以与旋转运动同步地局部限制对与基座(5)之间的热传输的影响。基座(5)。特别地,提供了具有改变的导热率特性的温度控制气体,该温度控制气体通过馈送开口(14')被周期性地馈送到基座(5)和冷却单元(30)之间的间隙(10)中。

著录项

  • 公开/公告号DE102019104433A1

    专利类型

  • 公开/公告日2020-08-27

    原文格式PDF

  • 申请/专利权人 AIXTRON SE;

    申请/专利号DE102019104433A1

  • 发明设计人 PETER SEBALD LAUFFER;

    申请日2019-02-21

  • 分类号C23C16/46;

  • 国家 DE

  • 入库时间 2022-08-21 11:01:26

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