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CVD reactor with means for locally influencing the susceptor temperature
CVD reactor with means for locally influencing the susceptor temperature
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机译:具有局部影响基座温度的装置的CVD反应器
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摘要
The invention relates to a device and a method for the thermal treatment of substrates with a susceptor (5) for receiving at least one substrate, which can be heated by a heating device (13) and rotatably driven by a rotary drive (20) about an axis of rotation (A). In order to compensate for local temperature differences on the rotating susceptor (5), means (14, 14 '; 15, 16) are provided for locally limited influencing of the heat transport to or from the susceptor (5) synchronized with the rotational movement of the susceptor (5). In particular, provision is made for a temperature control gas with changing thermal conductivity properties to be fed periodically through a feed opening (14 ') into a gap (10) between the susceptor (5) and a cooling unit (30).
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