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CVD REACTOR HAVING MEANS FOR LOCALLY INFLUENCING THE SUSCEPTOR TEMPERATURE
CVD REACTOR HAVING MEANS FOR LOCALLY INFLUENCING THE SUSCEPTOR TEMPERATURE
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机译:CVD反应器具有用于局部影响基座温度的方法
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摘要
The invention relates to a device and a method for the thermal treatment of substrates using a susceptor (5), which can be heated with a heater (13) and driven in rotation about a rotation axis (A) by a rotary drive (20), to hold the at least one substrate.Means (14, 14'; 15, 16) are provided to influence the heat transfer to or from the susceptor (5) in a locally limited manner synchronized with the rotary movement of the susceptor (5) to equalize local temperature differences on the rotating susceptor (5).In particular, a temperature control gas with changing heat conduction properties is periodically fed in a periodically pulsed manner through a feed opening (14') into a gap (10) between the susceptor (5) and a cooling unit (30).
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