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CVD REACTOR HAVING MEANS FOR LOCALLY INFLUENCING THE SUSCEPTOR TEMPERATURE

机译:CVD反应器具有用于局部影响基座温度的方法

摘要

The invention relates to a device and a method for the thermal treatment of substrates using a susceptor (5), which can be heated with a heater (13) and driven in rotation about a rotation axis (A) by a rotary drive (20), to hold the at least one substrate.Means (14, 14'; 15, 16) are provided to influence the heat transfer to or from the susceptor (5) in a locally limited manner synchronized with the rotary movement of the susceptor (5) to equalize local temperature differences on the rotating susceptor (5).In particular, a temperature control gas with changing heat conduction properties is periodically fed in a periodically pulsed manner through a feed opening (14') into a gap (10) between the susceptor (5) and a cooling unit (30).
机译:本发明涉及一种用于使用基座(5)的基板的热处理的装置和方法,其可以用加热器(13)加热并通过旋转驱动器(20)绕旋转轴(A)旋转驱动,保持至少一个基板。提供至少一个基板。提供(14,14'; 15,16)以以与基座的旋转运动同步的局部有限的方式影响到电感或从基座(5)的热传递(5 )为了均衡旋转基座(5)上的局部温度差异。特别是,通过将馈送开口(14')定期脉冲方式周期性地进料到具有改变的导热性能的温度控制气体进入间隙(10)基座(5)和冷却单元(30)。

著录项

  • 公开/公告号WO2020169385A3

    专利类型

  • 公开/公告日2021-03-18

    原文格式PDF

  • 申请/专利权人 AIXTRON SE;

    申请/专利号WO2020EP53289

  • 发明设计人 LAUFFER PETER SEBALD;

    申请日2020-02-10

  • 分类号H01L21/687;C23C16/46;H01L21/67;C23C16/458;

  • 国家 EP

  • 入库时间 2022-08-24 17:49:41

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