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CVD reactor with means to locally influence susceptor temperature

机译:CVD反应器具有局部影响基座温度的手段

摘要

The present invention relates to a device and method for thermal treatment of substrates using a susceptor (5), which is heated with a heater (13) and driven rotationally about an axis of rotation (A) by a rotary drive (20) and holds at least one stall. Means 14 , 14 ′; 15 , 16 are connected to or to the susceptor 5 in a locally limited manner synchronized with the rotational movement of the susceptor 5 to equalize the local temperature difference of the rotating susceptor 5 . It is provided to influence the heat transfer from the susceptor 5 . In particular, a temperature control gas whose heat conduction properties change is periodically supplied in a pulsed manner periodically to the gap 10 between the susceptor 5 and the cooling unit 30 through the supply opening 14 ′.
机译:本发明涉及一种使用基座(5)热处理的装置和方法,其用加热器(13)加热,并通过旋转驱动器(20)绕旋转轴(a)旋转地驱动并保持 至少一个摊位。 意思是14,14'; 如图15,16以与基座5的旋转运动同步的局部有限的方式连接到基座5,以均衡旋转基座5的局部温差。 提供以影响来自基座5的热传递。 特别地,通过供应开口14'周期性地以脉冲方式以脉冲方式以脉冲方式提供热导电性能变化的温度控制气体。

著录项

  • 公开/公告号KR20210128461A

    专利类型

  • 公开/公告日2021-10-26

    原文格式PDF

  • 申请/专利权人 아익스트론 에스이;

    申请/专利号KR1020217029877

  • 发明设计人 라우페르 페테르 세발트;

    申请日2020-02-10

  • 分类号C23C16/458;C23C16/455;C23C16/46;H01L21/67;H01L21/687;

  • 国家 KR

  • 入库时间 2024-06-14 22:16:49

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