FIELD EFFECT TRANSISTOR USING TRANSITION METAL DICHALCOGENIDE AND METHOD FOR THE PRODUCTION THEREOF

摘要

In a method of making a two-dimensional material layer, a nucleation structure is made over a substrate and a transition metal dichalcogenide (TMD) layer is made to grow laterally from the nucleation structure. In one or more of the above and subsequent embodiments, the TMD layer is single crystal.