A Compact Model for Transition Metal Dichalcogenide Field Effect Transistors with Effects of Interface Traps

摘要

We presented a compact model for transition metal dichalcogenide (TMD) field effect transistors (FETs) by considering the indispensable effects of interface traps. By simplifying the energy distribution of interface traps, a large amount of numerical calculations in previously published models can be avoided. At the same time, our model provides a good fit to the experimental results. The proposed converging and accurate model is suitable for efficient circuit explorations for the future complex systems based on TMD FETs.