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Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases

机译:Ni浓度对非晶硅薄膜晶化的影响及不同Ni硅化物相的发展

摘要

The crystallization mechanism was the subject of the present study which reports on the structure, and the Ni-silicide formation, of Si films containing different concentrations of Ni. The films were prepared by sputtering and were analyzed by compositional and structural characterization techniques. Additional information was obtained by thermal annealing the films up to 800 °C. The experimental results indicated that, in the as-deposited form, the films are amorphous, homogeneous, and with Ni contents in the ∼0-40 at. % range. Moreover, the development of Si and/or Ni-silicide crystalline structures was susceptible to factors like the Ni concentration, the annealing temperature and the annealing process (if cumulative or not, for example).
机译:结晶机理是本研究的主题,其报告了含有不同浓度的Ni的Si膜的结构和Ni-硅化物的形成。通过溅射制备膜,并通过组成和结构表征技术进行分析。通过在高达800°C的温度下对膜进行热退火,可以获得更多信息。实验结果表明,在沉积状态下,薄膜是无定形的,均质的,并且镍含量在〜0-40at。 % 范围。而且,Si和/或Ni硅化物晶体结构的发展容易受到诸如Ni浓度,退火温度和退火过程(例如,如果累积或不累积)之类的因素的影响。

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