首页>
外文OA文献
>Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases
【2h】
Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases
展开▼
机译:Ni浓度对非晶硅薄膜晶化的影响及不同Ni硅化物相的发展
展开▼
免费
页面导航
摘要
著录项
引文网络
相似文献
相关主题
摘要
The crystallization mechanism was the subject of the present study which reports on the structure, and the Ni-silicide formation, of Si films containing different concentrations of Ni. The films were prepared by sputtering and were analyzed by compositional and structural characterization techniques. Additional information was obtained by thermal annealing the films up to 800 °C. The experimental results indicated that, in the as-deposited form, the films are amorphous, homogeneous, and with Ni contents in the ∼0-40 at. % range. Moreover, the development of Si and/or Ni-silicide crystalline structures was susceptible to factors like the Ni concentration, the annealing temperature and the annealing process (if cumulative or not, for example).
展开▼