Solid phase epitaxial crystallization of amorphous silicon films on insulating substrates

摘要

There is described an epitaxial crystallization process comprising: a) providing a substrate (10) with an upper and lower surface, b) depositing a layer (14) of amorphous silicon on the upper surface of the substrate, c) depositing a capping seed layer (16) on the amorphous silicon layer, and d) annealing to crystallize the amorphous silicon layer (14). e) removing the capping seed layer (16). IMAGE