Kinetics of Solid-Phase Crystallization in Ion-Implanted and Deposited Amorphous-Silicon Films

摘要

Epitaxial growth kinetics in ion-implanted and UHV-deposited amorphous-silicon films on Si (100) substrates is reviewed. Crystallization kinetics are measured during laser heating, and microstructural changes are investigated. From 475 exp 0 C to 1350 exp 0 C and rates from .01 A/sec to 10 exp 8 A/sec, solid-phase epitaxy (SPE) is well described by an Arrhenius expression. Kinetics parameters are determined for intrinsic SPE in self-implanted and UHV-deposited amorphous films; deviations from intrinsic behavior caused by the addition of B, P, F, and As are studied as a function of interface position from 500 to 1000 exp 0 C. Effects of dopant compensation, temperature-dependent kinetic competition between SPE and precipitate formation in asenic-implanted films, and the combined effects of rate retarding (F) and rate-enhancing (B) impurities are reported. Finally, SPE rates in excess of 10 exp 8 A/sec above 1350 exp 0 C are discussed with respect to a proposed depression in the Si(a) melting temperature. Comparison of kinetics with transition-state predictions imply that T/sub m/(a) < T/sub m/(c); however, the results strongly suggest that in cw laser-heating experiments, the transition from S(a) implies Si(c) is kinetically favored over the two-step Si(a) implies Si(l) implies Si(c) transition between T/sub m/(a) and T/sub m/. (ERA citation 08:046857)