METHOD OF CRYSTALLIZING AMORPHOUS SILICON THIN FILM USING CRYSTALLIZATION INDUCING THIN FILM WITH MINIMUM THICKNESS AND CONCENTRATION

摘要

PURPOSE: A method of crystallizing an amorphous silicon thin film is provided to reduce surface roughness of a crystallized silicon thin film and to maximize the crystallization of silicon by depositing a crystallization inducing film with a minimum thickness and concentration on the amorphous silicon thin film. CONSTITUTION: A crystallization inducing thin film with a thickness of 1.0 nm or less is formed on an amorphous silicon thin film. A heat treatment is performed on the resultant structure at a temperature of 520 deg.C or less. The crystallization inducing thin film is made of a noble metal such as Au, Ag, Al, Sb, and In or a transition metal such as Ti, Ni, and Cu.