Quasi-linear modeling of power saturation in bipolar junction transistors

摘要

Nowadays the problem of accurate power saturation prediction becomes more eminent. The powerful and expensive CAD systems provide approximate behaviors of power saturation that do not always coincide with the realistic scenario. The state-of-the-art quasi-linear transistor model that is a logical development of the small-signal hybrid-p model has been initially applied for oscillation analysis. In this thesis we investigate the quasi-linear model for power saturation prediction in bipolar junction transistors. The efficiency of the modeled power saturation is verified by comparing it with the simulation in Agilent Advanced Deign System 2009 and measurement results. According to the extensive computational analysis the quasi-linear modeling presents high accuracy in the linear region of power saturation in the range of 0.01 – 0.35 dBm, whereas the simulated curves lag behind in the range of 2 dBm – 7 dBm. Moreover, the quasi-linear model predicts the power saturation point more accurately compared to the simulations using the CAD systems.