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Investigation of deep level defects in copper irradiated bipolar junction transistor

机译:铜辐照双极结型晶体管深能级缺陷的研究

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摘要

Commercial bipolar junction transistor (2N 2219A, npn) irradiated with 150 MeV Cu11+-ions with fluence of the order 1012 ions cm-2, is studied for radiation induced gain degradation and deep level defects. I-V measurements are made to study the gain degradation as a function of ion fluence. The properties such as activation energy, trap concentration and capture cross-section of deep levels are studied by deep level transient spectroscopy (DLTS). Minority carrier trap levels with energies ranging from EC - 0.164 eV to EC - 0.695 eV are observed in the base-collector junction of the transistor. Majority carrier trap levels are also observed with energies ranging from EV + 0.203 eV to EV + 0.526 eV. The irradiated transistor is subjected to isothermal and isochronal annealing. The defects are seen to anneal above 350 °C. The defects generated in the base region of the transistor by displacement damage appear to be responsible for transistor gain degradation. © 2008 Elsevier Ltd. All rights reserved.
机译:研究了用150 MeV Cu11 +离子辐照的1012离子cm-2量级的商业双极结晶体管(2N 2219A,npn)的辐射引起的增益降低和深层缺陷。进行I-V测量以研究增益衰减与离子通量的关系。通过深能级瞬态光谱法(DLTS)研究了诸如深层能级的活化能,陷阱浓度和捕获截面等特性。在晶体管的基极-集电极结中观察到少数载流子陷阱能级,其能量范围为EC-0.164 eV至EC-0.695 eV。在EV + 0.203 eV至EV + 0.526 eV的能量范围内,也观察到多数载流子陷阱能级。被照射的晶体管经受等温和等时退火。缺陷可以在350°C以上退火。由位移损伤在晶体管的基极区域中产生的缺陷似乎是造成晶体管增益下降的原因。 ©2008 Elsevier Ltd.保留所有权利。

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