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Structural Properties of Nickel Metal-Induced Laterally Crystallized Silicon Films

机译：镍金属诱导的横向结晶硅膜的结构性质

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Mitsutoshi Miyasaka; Kenji Makihira; Tanemasa Asano; Béla Pecz; John Stoemenos;
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1. Leakage Current Suppression on Metal-Induced Laterally Crystallized Polycrystalline Silicon Thin-Film Transistors by Asymmetrically Deposited Nickel [J] . Chang Woo Byun, Se Wan Son, Yong Woo Lee, Japanese journal of applied physics . 2013,第10ISSUE2期

机译：不对称沉积镍对金属诱导的横向结晶多晶硅薄膜晶体管漏电流的抑制
2. Structural Properties of Nickel-Metal-lnduced Laterally Crystallized Silicon Films [J] . Mitsutoshi Miyasaka, Kenji Makihira, Tanemasa Asano, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2003,第0期

机译：镍金属诱导的横向结晶硅膜的结构性质
3. Thermal Stress Effects on the Electrical Properties of p-Channel Polycrystalline-Silicon Thin-Film Transistors Fabricated via Metal-Induced Lateral Crystallization [J] . Park J.H., Seok K.H., Kiaee Z., Semiconductor Manufacturing, IEEE Transactions on . 2015,第1期

机译：热应力对通过金属诱导横向结晶制备的p沟道多晶硅薄膜晶体管电性能的影响
4. Structural Properties of Nickel-Metal-Induced Laterally Crystallized Silicon Films [C] . Mitsutoshi Miyasaka, Kenji Makihira, Tanemasa Asano, International semiconductors conference . 2003

机译：镍金属诱导的横向结晶硅膜的结构性能
5. Modeling of polysilicon thin-film transistors formed by grain enhancement technology: Metal-induced lateral crystallization. [D] . Cheng, Chun Fai. 2005

机译：通过晶粒增强技术形成的多晶硅薄膜晶体管的建模：金属诱导的横向结晶。
6. Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon [O] . Sonia Ben Slama, Messaoud Hajji, Hatem Ezzaouia 2012

机译：通过PECVD在镍金属化多孔硅上沉积的非晶硅薄膜的结晶
7. Stress power dependent self-heating degradation of metal-induced laterally crystallized n-type polycrystalline silicon thin-film transistors [O] . Wang, Huaisheng, Wang, Mingxiang, Yang, Zhenyu, 2007

机译：金属诱导的横向结晶n型多晶硅薄膜晶体管的应力功率依赖性自热退化

Structural Properties of Nickel Metal-Induced Laterally Crystallized Silicon Films

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