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Growth and characterization of Bi2Se3 thin films by pulsed laser deposition using alloy target

机译:利用合金靶材通过脉冲激光沉积法生长和表征Bi2Se3薄膜

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摘要

Bi2Se3 thin films were deposited on the (100) oriented Si substrates by pulsed laser deposition technique at different substrate temperatures (room temperature – 400 ºC). The effects of the substrate temperature on the structural and electrical properties of the Bi2Se3 films were studied. The film prepared at room temperature showed a very poor polycrystalline structure with the mainly orthorhombic phase. The crystallinity of the films was improved by heating the substrate during the deposition and the crystal phase of the film changed to the rhombohedral phase as the substrate temperature was higher than 200 ºC. The stoichiometry of the films and the chemical state of Bi and Se elements in the films were studied by fitting the Se 3d and the Bi 4d5/2 peaks of the X-ray photoelectron spectra. The hexagonal structure was seen clearly for the film prepared at the substrate temperature of 400 ºC. The surface roughness of the film increased as the substrate temperature was increased. The electrical resistivity of the film decreased from 1x10-3 to 3 x 10-4 Ω cm as the substrate temperature was increased from room temperature to 400 ºC.
机译:在不同的衬底温度(室温– 400ºC)下,通过脉冲激光沉积技术将Bi2Se3薄膜沉积在(100)取向的Si衬底上。研究了衬底温度对Bi2Se3薄膜结构和电学性能的影响。在室温下制备的膜显示出非常差的多晶结构,主要是正交相。通过在沉积过程中加热基材,可以提高薄膜的结晶度,并且当基材温度高于200ºC时,薄膜的结晶相会变为菱面体相。通过拟合X射线光电子能谱的Se 3d和Bi 4d5 / 2峰,研究了薄膜的化学计量以及Bi和Se元素的化学态。对于在400℃的基材温度下制备的薄膜,六边形结构清晰可见。膜的表面粗糙度随着基板温度的升高而增加。随着基板温度从室温升高到400ºC,薄膜的电阻率从1x10-3降低到3 x 10-4Ωcm。

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