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Characterization and properties of cobalt and europium co-doped ZnO nanostructures fabricated by CVD and K,Na , Sm doped ZnO nanostructures fabricated by hydrothermal method

机译:CVD制备钴钴and共掺杂ZnO纳米结构的表征与性能以及水热法制备K,Na,Sm掺杂ZnO纳米结构的表征与性能

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摘要

Spin-based devices are the next generation devices to replace current semiconductor devices. For realizing the functions of spin-based devices, new materials have to be developed. Diluted magnetic semiconductor (DMS) is one of the promising materials for spintronics devices, especially DMS based on oxide semiconductor such as ZnO after the predication by Dietl and his colleagues. After the prediction, many researches on the ZnO based diluted magnetic semiconductors have been performed. Room temperature ferromagnetism has been widely reported. However, the mechanism is not clear. Secondary phases and magnetic clusters have been claimed to be the origin of ferromagnetism. For example, Co doped ZnO films only show room temperature ferromagnetism when it is prepared under an oxygen poor environment, which makes it possible to produce magnetic Co clusters. Therefore, intrinsic ferromagnetism is doubtful. However, it is widely accepted that Co doped ZnO quantum dot has intrinsic ferromagnetism. Hence, the ferromagnetism in nanostructured diluted magnetic semiconductor is of interest. In this thesis, two methods CVD and hydrothermal approaches have been used for the fabrication of ZnO based nanorods doped with magnetic element and nonmagnetic element. For CVD method, Eu and Co are codoped into ZnO. It shows that Co doped ZnO alone easily induces Co magnetic clusters, which is confirmed by XRD analysis. However, if a certain amount of Eu is codoped into ZnO, the Co doping can be stabilized. For the hydrothermal method, Na, K and Sm have been used as dopant to incorporate with ZnO nanorods. It is know that N and K are not magnetic element. However, by delicate control of fabrication parameters, room temperature ferromagnetism has been observed. The ferromagnetism is due to the formation of Zn vacancies by Na or K doping. It is known that Sm is one of the rare earth elements, which possesses 4f orbital having large spin-orbital coupling. Experimental results indicate that a small amount of Sm doping in ZnO can induce room temperature ferromagnetism. High doping concentration can greatly decrease the magnetic moment, which may be due to the formation of antiferromagnetic coupling for high doping concentration.
机译:基于自旋的器件是替代当前半导体器件的下一代器件。为了实现基于旋转的设备的功能,必须开发新材料。在Dietl和他的同事们的预言之后,稀磁半导体(DMS)是自旋电子器件中很有希望的材料之一,尤其是基于氧化物半导体(例如ZnO)的DMS。在预测之后,已经对基于ZnO的稀释磁性半导体进行了许多研究。室温铁磁性已被广泛报道。但是,机制尚不清楚。次级相和磁簇被认为是铁磁性的起源。例如,掺钴的ZnO膜仅在贫氧环境下制备时才显示室温铁磁性,这使得可以生产磁性的Co团簇。因此,固有的铁磁性是值得怀疑的。然而,Co掺杂的ZnO量子点具有固有的铁磁性已被广泛接受。因此,纳米结构稀磁半导体中的铁磁性是令人关注的。本文采用化学气相沉积和水热法两种方法制备了掺杂有磁性元素和非磁性元素的ZnO基纳米棒。对于CVD方法,将Eu和Co共掺杂到ZnO中。结果表明,Co掺杂的ZnO容易诱导Co磁团簇,这通过XRD分析得到了证实。然而,如果将一定量的Eu共掺杂到ZnO中,则可以稳定Co的掺杂。对于水热法,已将Na,K和Sm用作掺入ZnO纳米棒的掺杂剂。已知N和K不是磁性元素。然而,通过精细控制制造参数,已观察到室温铁磁性。铁磁性是由于Na或K掺杂形成Zn空位。已知Sm是稀土元素之一,其具有具有大的自旋轨道耦合的4f轨道。实验结果表明,ZnO中少量的Sm掺杂可以诱导室温铁磁。高掺杂浓度会大大降低磁矩,这可能是由于高掺杂浓度形成了反铁磁耦合。

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