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From Growth to Electronic Structure of Dipolar Organic Semiconductors on Coinage Metal Surfaces

机译:硬币金属表面上偶极有机半导体的生长到电子结构

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摘要

In this thesis, I present a comprehensive study of the interfacial electronic structure and thin film growth of two types of dipolar organic semiconductors on noble metals by employing a surface science approach, which underlines the critical role of surface electronic states in determining the interfacial electronic structure and self-assembly of organic semiconductors. I show that the electronic structure at organic/metal interfaces is complex and depends on important factors such as molecular adsorption configuration, surface/molecule coupling strength, reactivity of the substrate, molecular electrostatics, and local film structure. I demonstrate the fundamental capability of the image potential states and resonances in probing the local film environment, especially in systems consisting of inhomogeneous film structure. I also show that the presence of adsorbates on a surface allows one to investigate quantum mechanical interference effects otherwise not accessible on the bare surface. The dipolar organic semiconductors studied here are vanadyl naphthalocyanine (VONc) and chloroboron-subphthalocyanine (ClB-SubPc). The single crystals of gold and copper with hexagonal surface symmetry (111) were used to investigate the interfacial properties of VONc and ClB-SubPc, respectively. The fundamental understanding of self-assembly of large π-conjugated organic semiconductors on metals is a crucial step in controlling fabrication of supramolecular structures. Here, I provide a first step in this direction with a detailed and quantitative analysis of molecular nearest-neighbor distances that unravels the fundamental intermolecular interactions of organic semiconductors on transition metal surfaces. I additionally investigated the interfacial electronic structure of these organic semiconductors to examine the relation between molecular adsorption orientation and charge transfer across the interface.
机译:在本文中,我通过表面科学方法对贵金属上两种类型的偶极有机半导体的界面电子结构和薄膜生长进行了全面的研究,这突显了表面电子态在确定界面电子结构中的关键作用。和有机半导体的自组装。我发现有机/金属界面处的电子结构很复杂,并且取决于重要的因素,例如分子吸附构型,表面/分子耦合强度,基材的反应性,分子静电和局部薄膜结构。我证明了在探测局部胶片环境时,尤其是在由不均匀胶片结构组成的系统中,图像电势状态和共振的基本能力。我还表明,表面上吸附物的存在使人们能够研究量子机械干涉效应,否则在裸露的表面上是无法获得的。此处研究的偶极有机半导体是钒基萘酞菁(VONc)和氯硼-次酞菁(ClB-SubPc)。采用具有六边形表面对称性的金和铜单晶(111)分别研究了VONc和ClB-SubPc的界面性质。大型π共轭有机半导体在金属上自组装的基本理解是控制超分子结构制造的关键步骤。在这里,我向这个方向迈出了第一步,对分子的最近邻距离进行了详细,定量的分析,揭示了过渡金属表面上有机半导体的基本分子间相互作用。我还研究了这些有机半导体的界面电子结构,以研究分子吸附取向与界面上电荷转移之间的关系。

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    Ilyas Nahid;

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  • 年度 2014
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