The interaction between a water cluster ion beam and the surface of a silicon substrate was investigated. The sputtering yield of silicon by a water cluster ion beam was approximately ten times larger than that by an argon monomer ion beam. X-ray photoelectron spectroscopy was used to analyze the silicon surface irradiated with a water cluster ion beam. The analysis revealed that the surface was oxidized, and the oxidation was saturated approximately at the dose of 1 × 1014 ions/cm2. The number of disordered atoms measured by the Rutherford backscattering also supported the result.
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机译：研究了水簇离子束与硅衬底表面之间的相互作用。水团簇离子束对硅的溅射产率大约是氩气单体离子束对硅的溅射产率大十倍。用X射线光电子能谱分析水团簇离子束辐照的硅表面。分析表明，该表面被氧化，并且氧化以约1×1014离子/ cm 2的剂量饱和。通过卢瑟福反向散射测量的无序原子数也支持该结果。
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