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Submonolayer Quantum Dot Infrared Photodetector

机译:亚单层量子点红外光电探测器

摘要

A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.
机译:已经开发了一种用于将亚单层(SML)量子点(QD)或SML QD堆栈(而不是常规的Stranski-Krastanov(S-K)QD)插入子带间光电探测器的有源区域的方法。一种典型的配置是将InAs SML QD嵌入GaAs薄层中,并由AlGaAs势垒包围。在此,GaAs和AlGaAs具有几乎相同的晶格常数,而InAs具有较大的晶格常数。在QD红外光电探测器中,重要的量化方向是在垂直于法线入射辐射的平面内。平面内量化可以吸收法向入射辐射。 S-K QD的高度控制着量化能级的位置,但对于所需的法向入射吸收特性并不是至关重要的。 SML QD或SML QD堆栈配置可更好地控制生长的结构,保留垂直入射吸收特性,并减少应变累积,从而允许更厚的有源层实现更高的量子效率。

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