High-detectivity infrared photodetector based on InAs submonolayer quantum dots grown on CaAs(001) with a 2 × 4 surface reconstruction

摘要

The submonolayer quantum dots of an infrared photodetector were grown by molecular beam epitaxy in the presence of a very low As flux and a 2 x 4 surface reconstruction in order to effectively nucleate small two-dimensional InAs islands that are required to form such nanostructures. A specific detectivity of 9.2 x 10(10) cm Hz(1/2)W(-)1 was obtained at 10 K with a bias of 1.0 V. Published under license by AIP Publishing.