首页> 外文OA文献 >Organometallic chemical vapor deposition of copper oxide thin films
【2h】

Organometallic chemical vapor deposition of copper oxide thin films

机译:氧化铜薄膜的有机金属化学气相沉积

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

Copper oxide thin films were prepared by organometallic chemical vapor deposition (OMCVD or MOCVD) technique. This MOCVD process uses copper acetylacetonate (Cu(acac)[subscript]2) as the copper precursor. Spectroscopic (X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and infrared spectroscopy (IR)) and diffraction (X-ray diffraction (XRD)) methods were employed to analyze the chemical composition and oxidation state of copper in these films. According to spectroscopic results, the composition of these MOCVD film primarily depends on the deposition temperature and partial pressures of the reactants. As indicated by XPS and XRD results, Cu[subscript]2O films were prepared at 360°C, with an oxygen partial pressure of 150 torr and copper precursor partial pressure of 0.20 torr. CuO films were grown at temperatures above 420°C, with an oxygen pressure of 190 torr and precursor pressure of 0.20 torr. By using water vapor instead of oxygen as the co-reactant, Cu films were deposited at temperatures above 380°C, with a water vapor pressure of 15 torr and precursor pressure of 0.20 torr. To examine the specific mechanism of precursor decomposition, a molecular vibrational spectroscopic technique, Fourier Transform Infrared spectroscopy (FTIR), was employed to investigate the vapor phase product distribution in the MOCVD effluent stream. Based on FTIR results, a kinetic model was proposed. This model suggests that steric effect from chelating ligands and bond strength sequence in the precursor molecule are the principle factors determining the decomposition products of Cu(acac)[subscript]2 in the MOCVD reactor. Differential scanning calorimetry (DSC) was used to study the pyrolysis pattern of Cu(acac)[subscript]2. Particularly, the impacts of oxygen concentration, carrier gas molecular weight, and heating rate on the pyrolysis of this precursor were studied. From DSC results, it seems that Cu(acac)[subscript]2 undergoes a single-step, exothermic reaction in the ambient with oxygen gas present. In DSC pattern, the exothermic peak height also increased as oxygen concentration increased. The activation energy for the exothermic step was derived by Kissinger equation as 20 kcal/mol. Based on experimental results of deposition, FTIR, and DSC, it seems that a deposition temperature above a critical value is necessary to initiate the decomposition of Cu(acac)[subscript]2 and oxygen can assist this reaction by accelerating the reaction rate.
机译:通过有机金属化学气相沉积(OMCVD或MOCVD)技术制备氧化铜薄膜。该MOCVD工艺使用乙酰丙酮铜(Cu(acac)2)作为铜前体。光谱法(X射线光电子能谱(XPS),俄歇电子能谱(AES)和红外光谱(IR))和衍射法(X射线衍射(XRD))被用于分析铜的化学组成和氧化态。这些电影。根据光谱结果,这些MOCVD膜的组成主要取决于沉积温度和反应物的分压。如XPS和XRD结果所示,在360℃下以150托的氧分压和0.20托的铜前体分压制备Cu 2 O薄膜。 CuO膜在高于420℃的温度,190托的氧气压力和0.20托的前体压力下生长。通过使用水蒸气代替氧气作为共反应剂,在高于380℃的温度,水蒸气压力为15托和前体压力为0.20托的情况下沉积Cu膜。为了检查前体分解的具体机理,采用了分子振动光谱技术,傅立叶变换红外光谱(FTIR),研究了MOCVD流出物流中气相产物的分布。基于FTIR结果,建立了动力学模型。该模型表明,螯合配体的空间效应和前体分子中的键强度序列是决定MOCVD反应器中Cu(acac)[下标] 2分解产物的主要因素。用差示扫描量热法(DSC)研究了Cu(acac)[下标] 2的热解模式。特别地,研究了氧气浓度,载气分子量和加热速率对该前体的热解的影响。从DSC结果看,似乎Cu(acac)2在环境中在存在氧气的情况下经历了一步一步的放热反应。在DSC模式中,放热峰高也随着氧浓度的增加而增加。通过基辛格方程,放热步骤的活化能为20 kcal / mol。根据沉积,FTIR和DSC的实验结果,似乎高于临界值的沉积温度对于引发Cu(acac)[2]的分解是必要的,并且氧气可以通过加快反应速率来辅助该反应。

著录项

  • 作者

    Chang, Yu-Neng;

  • 作者单位
  • 年度 1992
  • 总页数
  • 原文格式 PDF
  • 正文语种 en
  • 中图分类

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号