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Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer

机译:使用低生长速率的InN缓冲层通过RF溅射改善在Si(111)上沉积的InN层

摘要

We investigate the influence of a low-growth-rate InN buffer layer on structural and optical properties of wurtzite nanocrystalline InN films deposited on Si(111) substrates by reactive radio-frequency sputtering. The deposition conditions of the InN buffer layer were optimized in terms of morphological and structural quality, leading to films with surface root-mean-square roughness of ∿ 1 nm under low-growth-rate conditions (60 nm/h). The use of the developed InN buffer layer improves the crystalline quality of the subsequent InN thick films deposited at high growth rate (180 nm/h), as confirmed by the narrowing of X-ray diffraction peaks and the increase of the average grain size of the layers. This improvement of the structural quality is further confirmed by Raman scattering spectroscopy measurements. Room temperature PL emission peaking at ∿ 1.58 eV is observed for InN samples grown with the developed buffer layer. The crystal and optical quality obtained for InN films grown on Si(111) using the low-growth-rate InN buffer layer become comparable to high-quality InN films deposited directly on GaN templates by RF sputtering. © 2011 Elsevier B.V. All rights reserved.
机译:我们调查低生长速率的InN缓冲层对通过反应性射频溅射沉积在Si(111)衬底上的纤锌矿型纳米晶InN膜的结构和光学性能的影响。 InN缓冲层的沉积条件在形态和结构质量方面进行了优化,从而在低生长速率条件下(60 nm / h)形成了具有1 nm的表面均方根粗糙度的薄膜。 X射线衍射峰变窄和平均晶粒尺寸的增加证实了使用发达的InN缓冲层可以改善以高生长速率(180 nm / h)沉积的后续InN厚膜的晶体质量。层。拉曼散射光谱测量进一步证实了这种结构质量的提高。室温PL发射峰值在1.58 eV观察到与发达的缓冲层一起生长的InN样品。使用低生长速率InN缓冲层在Si(111)上生长的InN膜获得的晶体和光学质量与通过RF溅射直接沉积在GaN模板上的高质量InN膜相当。 ©2011 Elsevier B.V.保留所有权利。

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