A new type of infrared photodetector using free electron absorption in a heavily doped GaAs/GaAlAs quantum well structure has been demonstrated. Preliminary results indicate a strong response in the near infrared with a responsivity conservatively estimated at 200 A/W. The structure can potentially be tailored during fabrication for use in several infrared bands of interest, including the 3 to 5 micron band and the 8 to 10 micron band.
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机译：已经证明了一种新型的红外光电探测器，该探测器在重掺杂的GaAs / GaAlAs量子阱结构中使用自由电子吸收。初步结果表明，在近红外中有很强的响应，保守估计响应率为200 A / W。可以在制造期间定制结构的结构，以用于几个感兴趣的红外波段，包括3至5微米波段和8至10微米波段。
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