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Transient response in doped germanium photoconductors under very low background operation

机译:极低背景操作下掺杂锗光电导体的瞬态响应

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摘要

Doped germanium photoconductors are the most sensitive detectors for astronomy in the wavelength range 40–240 μm. Under the extremely low background conditions encountered in cooled satellite instruments, these devices exhibit a number of transient effects, such as slow relaxation after a step change in illumination or bias, and spontaneous spiking at high signal levels. Such behavior can degrade the excellent instantaneous sensitivity of these detectors and create calibration uncertainties. These effects have been observed in the Ge:Be photoconductors and the stressed and unstressed Ge:Ga photoconductors in the Long Wavelength Spectrometer, one of the instruments on the Infrared Space Observatory. A systematic investigation of the transient response of the Long Wavelength Spectrometer detectors to a step change in illumination as a function of operating temperature, bias electric field, and illumination step size has been carried out to determine operating conditions that minimize the effects of this behavior. The transient effects appear to be due primarily to carrier sweep out, but they are not fully explained by existing models for transient response.
机译:掺杂锗光电导体是在40–240μm波长范围内对天文学最敏感的探测器。在冷却的卫星仪器中遇到的极低背景条件下,这些设备表现出许多瞬态效应,例如照明或偏置的阶跃变化后的缓慢弛豫,以及高信号电平下的自发尖峰。这种行为会降低这些检测器的出色瞬时灵敏度,并产生校准不确定性。这些效应已在长空间光谱仪(红外空间天文台的仪器之一)中的Ge:Be光电导体以及受应力和不受应力的Ge:Ga光电导体中观察到。已经对长波长光谱仪探测器对照明阶跃变化的瞬态响应进行了系统研究,该瞬态响应随工作温度,偏置电场和照明阶跃大小而变化,以确定使该行为的影响最小化的工作条件。瞬态效应似乎主要归因于载流子扫出,但现有的瞬态响应模型无法完全解释瞬态效应。

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